10-13 NOV 2026 · Munich, Germany

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Microchip Technology DN2625DK6-G

Microchip Technology DN2625DK6-G electronic component product image

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Manufacturer No
DN2625DK6-G
Quantity
15
Availability
In Stock
Package
8-VDFN Exposed Pad
Packaging
Tray
Description
MOSFET 2N-CH 250V 1.1A 8DFN
Detailed Description
Mosfet Array 250V 1.1A Surface Mount 8-DFN (5x5)
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
Series
-
Packaging
Tray
Technology
MOSFET (Metal Oxide)
FET Feature
Depletion Mode
Power - Max
-
Manufacturer
Microchip Technology
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Vgs(th) (Max) @ Id
-
Base Product Number
DN2625
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
3.5Ohm @ 1A, 0V
Supplier Device Package
8-DFN (5x5)
Gate Charge (Qg) (Max) @ Vgs
7.04nC @ 1.5V
Drain to Source Voltage (Vdss)
250V
Input Capacitance (Ciss) (Max) @ Vds
1000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.1A
AttributeValue
Series-
PackagingTray
TechnologyMOSFET (Metal Oxide)
FET FeatureDepletion Mode
Power - Max-
ManufacturerMicrochip Technology
Configuration2 N-Channel (Dual)
Mounting TypeSurface Mount
Package / Case8-VDFN Exposed Pad
Vgs(th) (Max) @ Id-
Base Product NumberDN2625
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs3.5Ohm @ 1A, 0V
Supplier Device Package8-DFN (5x5)
Gate Charge (Qg) (Max) @ Vgs7.04nC @ 1.5V
Drain to Source Voltage (Vdss)250V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 25V
Current - Continuous Drain (Id) @ 25°C1.1A

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