10-13 NOV 2026 · Munich, Germany

MEET FIXCHIPS (C3-161) AT electronica 2026

Vishay TP0610K-T1-E3

Vishay TP0610K-T1-E3 electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
TP0610K-T1-E3
Date Code
21+
Quantity
12,000
Availability
In Stock
Package
SOT-23
Packaging
Tape and Reel
Description
Trans MOSFET P-CH 60V 0.185A 3-Pin SOT-23 T/R
Detailed Description
As an alternative to traditional transistors, the TP0610K-T1-E3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 350 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology.
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.95
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
3
Automotive
No
Lead Shape
Gull-wing
PCB changed
3
Availability
In Stock (cut strips)
Channel Mode
Enhancement
Channel Type
P
Configuration
Single
Package Width
1.4(Max)
Package Height
1.02(Max)
Package Length
3.04(Max)
Supplier Package
SOT-23
Maximum IDSS (uA)
0.025
Standard Package Name
SOT
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
350
Typical Gate Charge @ Vgs (nC)
1.7@15V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
10
Typical Turn-On Delay Time (ns)
20
Maximum Drain-Source Voltage (V)
60
Typical Gate Plateau Voltage (V)
4
Typical Turn-Off Delay Time (ns)
35
Maximum Diode Forward Voltage (V)
1.4
Typical Gate to Drain Charge (nC)
0.46
Maximum Gate Threshold Voltage (V)
3
Minimum Gate Threshold Voltage (V)
1
Typical Gate to Source Charge (nC)
0.26
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
0.185
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
23@25V
Maximum Drain-Source Resistance (mOhm)
6000@10V
Maximum Gate-Source Leakage Current (nA)
10000
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
0.8
Typical Drain-Source Resistance @ 25°C (mOhm)
3000@8V|2900@10V|3900@6V
Maximum Power Dissipation on PCB @ TC=25°C (W)
0.35
Typical Reverse Transfer Capacitance @ Vds (pF)
5@25V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
0.185
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
350
AttributeValue
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
CategoryPower MOSFET
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
AvailabilityIn Stock (cut strips)
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Supplier PackageSOT-23
Maximum IDSS (uA)0.025
Standard Package NameSOT
Number of Elements per Chip1
Maximum Power Dissipation (mW)350
Typical Gate Charge @ Vgs (nC)1.7@15V
Maximum Gate-Source Voltage (V)±20
Typical Output Capacitance (pF)10
Typical Turn-On Delay Time (ns)20
Maximum Drain-Source Voltage (V)60
Typical Gate Plateau Voltage (V)4
Typical Turn-Off Delay Time (ns)35
Maximum Diode Forward Voltage (V)1.4
Typical Gate to Drain Charge (nC)0.46
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)0.26
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.185
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)23@25V
Maximum Drain-Source Resistance (mOhm)6000@10V
Maximum Gate-Source Leakage Current (nA)10000
Maximum Positive Gate-Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)0.8
Typical Drain-Source Resistance @ 25°C (mOhm)3000@8V|2900@10V|3900@6V
Maximum Power Dissipation on PCB @ TC=25°C (W)0.35
Typical Reverse Transfer Capacitance @ Vds (pF)5@25V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)0.185
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)350

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