10-13 NOV 2026 · Munich, Germany

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Vishay TEFT4300

Vishay TEFT4300 electronic component product image

Image is only for reference

Manufacturer
Manufacturer No
TEFT4300
Quantity
19,585
Availability
In Stock
Package
T-1
Packaging
Bulk
Description
No Phototransistor Chip Silicon 925nm 2-Pin T-1
Detailed Description
Phototransistors 925nm Top View Radial, 3mm Dia (T-1)
Datasheet
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.49.70.80
PPAP
No
Type
Chip
EU RoHS
Compliant
Material
Silicon
Mounting
Through Hole
Polarity
NPN
ECCN (US)
EAR99
Pin Count
2
Automotive
No
PCB changed
2
Availability
In Stock
Package Width
3.2
Cut-Off Filter
Visible Cut-off
Package Height
4.5
Package Length
3.9
Lens Shape Type
Domed
Supplier Package
T-1
Viewing Orientation
Top View
Peak Wavelength (nm)
925
Phototransistor Type
Phototransistor
Fabrication Technology
NPN Transistor
Manufacturer Lead Time
10 weeks
Maximum Dark Current (nA)
200
Maximum Light Current (uA)
3200(Typ)
Number of Channels per Chip
1
Maximum Collector Current (mA)
50
Maximum Power Dissipation (mW)
100
Half Intensity Angle Degrees (°)
60
Maximum Operating Temperature (°C)
100
Minimum Operating Temperature (°C)
-40
Maximum Collector-Emitter Voltage (V)
70
Maximum Emitter-Collector Voltage (V)
5
Maximum Collector-Emitter Saturation Voltage (V)
0.3
AttributeValue
HTS8541.49.70.80
PPAPNo
TypeChip
EU RoHSCompliant
MaterialSilicon
MountingThrough Hole
PolarityNPN
ECCN (US)EAR99
Pin Count2
AutomotiveNo
PCB changed2
AvailabilityIn Stock
Package Width3.2
Cut-Off FilterVisible Cut-off
Package Height4.5
Package Length3.9
Lens Shape TypeDomed
Supplier PackageT-1
Viewing OrientationTop View
Peak Wavelength (nm)925
Phototransistor TypePhototransistor
Fabrication TechnologyNPN Transistor
Manufacturer Lead Time10 weeks
Maximum Dark Current (nA)200
Maximum Light Current (uA)3200(Typ)
Number of Channels per Chip1
Maximum Collector Current (mA)50
Maximum Power Dissipation (mW)100
Half Intensity Angle Degrees (°)60
Maximum Operating Temperature (°C)100
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)70
Maximum Emitter-Collector Voltage (V)5
Maximum Collector-Emitter Saturation Voltage (V)0.3

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