Vishay SI7137DP-T1-GE3
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Manufacturer
Manufacturer No
SI7137DP-T1-GE3
Quantity
50,000
Availability
In Stock
Package
PowerPAK SO EP
Packaging
Tape and Reel
Description
Trans MOSFET P-CH 20V 42A 8-Pin PowerPAK SO EP T/R
Detailed Description
Make an effective common source amplifier using this SI7137DP-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 6250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Datasheet
Payment
Delivery
HTS
COMPONENTS
PPAP
No
SVHC
Yes
EU RoHS
Compliant with Exemption
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
8
Automotive
No
Lead Shape
No Lead
PCB changed
8
Availability
In Stock
Channel Mode
Enhancement
Channel Type
P
Configuration
Single Quad Drain Triple Source
Package Width
5.89
Package Height
1.02
Package Length
4.9
Supplier Package
PowerPAK SO EP
Maximum IDSS (uA)
1
Manufacturer Lead Time
52 weeks
SVHC Exceeds Threshold
Yes
Typical Fall Time (ns)
110
Typical Rise Time (ns)
150
Number of Elements per Chip
1
Maximum Gate Resistance (Ohm)
3.6
Minimum Gate Resistance (Ohm)
0.9
Maximum Power Dissipation (mW)
6250
Typical Gate Charge @ 10V (nC)
390
Typical Gate Charge @ Vgs (nC)
[email protected]|390@10V
Maximum Gate-Source Voltage (V)
±12
Typical Output Capacitance (pF)
2150
Typical Turn-On Delay Time (ns)
100
Maximum Drain-Source Voltage (V)
20
Typical Gate Plateau Voltage (V)
1.8
Typical Turn-Off Delay Time (ns)
230
Maximum Diode Forward Voltage (V)
1.1
Typical Diode Forward Voltage (V)
0.64
Typical Gate to Drain Charge (nC)
46
Maximum Gate Threshold Voltage (V)
1.4
Minimum Gate Threshold Voltage (V)
0.5
Typical Gate to Source Charge (nC)
33.6
Typical Reverse Recovery Time (ns)
88
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
42
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
20000@10V
Typical Reverse Recovery Charge (nC)
105
Maximum Drain-Source Resistance (mOhm)
1.95@10V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
12
Maximum Pulsed Drain Current @ TC=25°C (A)
100
Typical Drain-Source Resistance @ 25°C (mOhm)
[email protected]|[email protected]|1.6@10V
Maximum Power Dissipation on PCB @ TC=25°C (W)
6.25
Typical Reverse Transfer Capacitance @ Vds (pF)
2650@10V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
42
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
54
| Attribute | Value |
|---|---|
| HTS | COMPONENTS |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Availability | In Stock |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.89 |
| Package Height | 1.02 |
| Package Length | 4.9 |
| Supplier Package | PowerPAK SO EP |
| Maximum IDSS (uA) | 1 |
| Manufacturer Lead Time | 52 weeks |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 110 |
| Typical Rise Time (ns) | 150 |
| Number of Elements per Chip | 1 |
| Maximum Gate Resistance (Ohm) | 3.6 |
| Minimum Gate Resistance (Ohm) | 0.9 |
| Maximum Power Dissipation (mW) | 6250 |
| Typical Gate Charge @ 10V (nC) | 390 |
| Typical Gate Charge @ Vgs (nC) | [email protected]|390@10V |
| Maximum Gate-Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 2150 |
| Typical Turn-On Delay Time (ns) | 100 |
| Maximum Drain-Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.8 |
| Typical Turn-Off Delay Time (ns) | 230 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Typical Diode Forward Voltage (V) | 0.64 |
| Typical Gate to Drain Charge (nC) | 46 |
| Maximum Gate Threshold Voltage (V) | 1.4 |
| Minimum Gate Threshold Voltage (V) | 0.5 |
| Typical Gate to Source Charge (nC) | 33.6 |
| Typical Reverse Recovery Time (ns) | 88 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 42 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 20000@10V |
| Typical Reverse Recovery Charge (nC) | 105 |
| Maximum Drain-Source Resistance (mOhm) | 1.95@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 100 |
| Typical Drain-Source Resistance @ 25°C (mOhm) | [email protected]|[email protected]|1.6@10V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 6.25 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2650@10V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 42 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 54 |
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