10-13 NOV 2026 · Munich, Germany

MEET FIXCHIPS (C3-161) AT electronica 2026

Vishay SI2328DS-T1-GE3

Vishay SI2328DS-T1-GE3 electronic component product image

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Manufacturer
Manufacturer No
SI2328DS-T1-GE3
Date Code
20+
Quantity
62
Availability
In Stock
Package
SOT-23
Packaging
Tape and Reel
Description
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R
Detailed Description
Looking for a component that can both amplify and switch between signals within your circuit? The SI2328DS-T1-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 730 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
Payment
PayPalEast West BankVISAMastercardWestern Union
Delivery
DHLFedExUPSTNT
AS9120
ISO 13485
ERAI Member
VDE
ISO 9001
ISO 14001
Five-Star After-Sales Service Certification
Bavarian Chips Alliance
UKAS Management Systems
ANAB ISO/IEC 17021
IAF
HTS
8541.29.00.55
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
3
Automotive
No
Lead Shape
Gull-wing
PCB changed
3
Availability
In Stock (cut strips)
Channel Mode
Enhancement
Channel Type
N
Configuration
Single
Package Width
1.4(Max)
Package Height
1.02(Max)
Package Length
3.04(Max)
Supplier Package
SOT-23
Standard Package Name
SOT
Typical Fall Time (ns)
10
Typical Rise Time (ns)
11
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
1250
Typical Gate Charge @ 10V (nC)
3.3
Typical Gate Charge @ Vgs (nC)
3.3@10V
Maximum Gate-Source Voltage (V)
±20
Typical Turn-On Delay Time (ns)
7
Maximum Drain-Source Voltage (V)
100
Typical Turn-Off Delay Time (ns)
9
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
1.15
Maximum Drain-Source Resistance (mOhm)
250@10V
AttributeValue
HTS8541.29.00.55
PPAPNo
EU RoHSCompliant
CategoryPower MOSFET
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
AvailabilityIn Stock (cut strips)
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Supplier PackageSOT-23
Standard Package NameSOT
Typical Fall Time (ns)10
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)1250
Typical Gate Charge @ 10V (nC)3.3
Typical Gate Charge @ Vgs (nC)3.3@10V
Maximum Gate-Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7
Maximum Drain-Source Voltage (V)100
Typical Turn-Off Delay Time (ns)9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.15
Maximum Drain-Source Resistance (mOhm)250@10V

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