TT Electronics / Semelab 2N6849
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| Attribute | Value |
|---|---|
| HTS | EA |
| PPAP | No |
| EU RoHS | Not Compliant |
| Category | Power MOSFET |
| Diameter | 9.4(Max) |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Height | 4.57(Max) |
| Supplier Package | TO-39 |
| Maximum IDSS (uA) | 100 |
| Standard Package Name | TO |
| Typical Fall Time (ns) | 140(Max) |
| Typical Rise Time (ns) | 140(Max) |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 20833 |
| Typical Gate Charge @ Vgs (nC) | 25@15V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 60(Max) |
| Maximum Drain-Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 140(Max) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.8 |
| Typical Input Capacitance @ Vds (pF) | 845@25V |
| Maximum Drain-Source Resistance (mOhm) | 300@10V |
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