TOSHIBA TK110E10PL,S1X
Image is only for reference
| Attribute | Value |
|---|---|
| HTS | 8541.29.00.55 |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Category | Power MOSFET |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.45 mm |
| Package Height | 8.59 mm |
| Package Length | 10.16 mm |
| Supplier Package | TO-220 |
| Standard Package Name | TO |
| Manufacturer Lead Time | 24 weeks |
| Typical Fall Time (ns) | 9 |
| Typical Rise Time (ns) | 6 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 87000 |
| Typical Gate Charge @ Vgs (nC) | [email protected]|33@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Maximum Drain-Source Voltage (V) | 100 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 42 |
| Typical Input Capacitance @ Vds (pF) | 2040@50V |
| Maximum Drain-Source Resistance (mOhm) | 10.7@10V |
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Packaging Process
