onsemi NVMFWS1D5N08XT1G
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Manufacturer
Manufacturer No
NVMFWS1D5N08XT1G
Date Code
25+
Quantity
2,125
Availability
In Stock
Package
DFNW EP
Packaging
Tape and Reel
Description
Trans MOSFET N-CH 80V 253A Automotive 5-Pin DFNW EP T/R
Datasheet
Payment
Delivery
HTS
8541.29.00.55
PPAP
Yes
SVHC
Yes
EU RoHS
Compliant with Exemption
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
5
Automotive
Yes
PCB changed
5
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N
Configuration
Single Quad Drain Triple Source
Package Width
5.9
Package Height
0.98
Package Length
4.9
Supplier Package
DFNW EP
Maximum IDSS (uA)
1
Standard Package Name
DFN
Manufacturer Lead Time
69 weeks
SVHC Exceeds Threshold
Yes
Typical Fall Time (ns)
9
Typical Rise Time (ns)
10
Supplier Temperature Grade
Automotive
Number of Elements per Chip
1
Maximum Power Dissipation (mW)
194000
Typical Gate Charge @ 10V (nC)
83
Typical Gate Charge @ Vgs (nC)
51@6V|83@10V
Maximum Gate-Source Voltage (V)
±20
Typical Output Capacitance (pF)
1690
Typical Turn-On Delay Time (ns)
24
Maximum Drain-Source Voltage (V)
80
Typical Turn-Off Delay Time (ns)
45
Maximum Diode Forward Voltage (V)
1.2
Typical Diode Forward Voltage (V)
0.81
Typical Gate to Drain Charge (nC)
13
Maximum Gate Threshold Voltage (V)
3.6
Minimum Gate Threshold Voltage (V)
2.4
Typical Gate to Source Charge (nC)
27
Typical Reverse Recovery Time (ns)
36
Maximum Operating Temperature (°C)
175
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
253
Operating Junction Temperature (°C)
-55 to 175
Typical Input Capacitance @ Vds (pF)
5880@40V
Typical Reverse Recovery Charge (nC)
290
Maximum Drain-Source Resistance (mOhm)
1.43@10V
Maximum Gate-Source Leakage Current (nA)
100
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
1071
Typical Reverse Transfer Capacitance @ Vds (pF)
25@40V
| Attribute | Value |
|---|---|
| HTS | 8541.29.00.55 |
| PPAP | Yes |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | Yes |
| PCB changed | 5 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 5.9 |
| Package Height | 0.98 |
| Package Length | 4.9 |
| Supplier Package | DFNW EP |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | DFN |
| Manufacturer Lead Time | 69 weeks |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 9 |
| Typical Rise Time (ns) | 10 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 194000 |
| Typical Gate Charge @ 10V (nC) | 83 |
| Typical Gate Charge @ Vgs (nC) | 51@6V|83@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 1690 |
| Typical Turn-On Delay Time (ns) | 24 |
| Maximum Drain-Source Voltage (V) | 80 |
| Typical Turn-Off Delay Time (ns) | 45 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.81 |
| Typical Gate to Drain Charge (nC) | 13 |
| Maximum Gate Threshold Voltage (V) | 3.6 |
| Minimum Gate Threshold Voltage (V) | 2.4 |
| Typical Gate to Source Charge (nC) | 27 |
| Typical Reverse Recovery Time (ns) | 36 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 253 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 5880@40V |
| Typical Reverse Recovery Charge (nC) | 290 |
| Maximum Drain-Source Resistance (mOhm) | 1.43@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Maximum Positive Gate-Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 1071 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 25@40V |
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