Diodes Incorporated DMC2400UV-7B
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Manufacturer
Manufacturer No
DMC2400UV-7B
Date Code
2230
Quantity
32,000
Availability
In Stock
Package
SOT-563
Packaging
Tape and Reel
Description
Trans MOSFET N/P-CH 20V 1.03A/0.7A 6-Pin SOT-563 T/R
Datasheet
Payment
Delivery
PPAP
No
EU RoHS
Compliant
Category
Power MOSFET
Mounting
Surface Mount
ECCN (US)
EAR99
Packaging
Tape and Reel
Pin Count
6
Automotive
No
PCB changed
6
Availability
No Stock Available
Channel Mode
Enhancement
Channel Type
N|P
Configuration
Dual
Package Width
1.2
Package Height
0.6(Max)
Package Length
1.6
Supplier Package
SOT-563
Maximum IDSS (uA)
0.1
Standard Package Name
SOT
Typical Fall Time (ns)
10.54@N Channel|19.2@P Channel
Typical Rise Time (ns)
7.28@N Channel|4.3@P Channel
Number of Elements per Chip
2
Maximum Power Dissipation (mW)
1000
Typical Gate Charge @ 10V (nC)
0.85@P Channel
Typical Gate Charge @ Vgs (nC)
[email protected]@N Channel|0.85@10V|[email protected]@P Channel
Maximum Gate-Source Voltage (V)
±12@N Channel|±8@P Channel
Typical Output Capacitance (pF)
6.5@N Channel|7.2@P Channel
Typical Turn-On Delay Time (ns)
4.06@N Channel|8.5@P Channel
Maximum Drain-Source Voltage (V)
20
Typical Gate Plateau Voltage (V)
1.3@N Channel|1.4@P Channel
Typical Turn-Off Delay Time (ns)
13.74@N Channel|20.2@P Channel
Maximum Diode Forward Voltage (V)
1.2
Typical Diode Forward Voltage (V)
0.7
Typical Gate to Drain Charge (nC)
0.1@N Channel|0.09@P Channel
Maximum Gate Threshold Voltage (V)
0.9@N Channel|1@P Channel
Minimum Gate Threshold Voltage (V)
0.5
Typical Gate to Source Charge (nC)
0.07@N Channel|0.09@P Channel
Maximum Operating Temperature (°C)
150
Minimum Operating Temperature (°C)
-55
Maximum Continuous Drain Current (A)
1.03@N Channel|0.7@P Channel
Operating Junction Temperature (°C)
-55 to 150
Typical Input Capacitance @ Vds (pF)
37.1@10V@N Channel|46.1@10V@P Channel
Maximum Drain-Source Resistance (mOhm)
480@5V@N Channel|970@5V@P Channel
Maximum Gate-Source Leakage Current (nA)
4000@N Channel|5000@P Channel
Maximum Positive Gate-Source Voltage (V)
12@N Channel|8@P Channel
Maximum Pulsed Drain Current @ TC=25°C (A)
3@N Channel|2@P Channel
Typical Drain-Source Resistance @ 25°C (mOhm)
[email protected]|[email protected]|[email protected]|[email protected]|[email protected]@P Channel|300@5V|[email protected]|[email protected]|[email protected]|[email protected]|[email protected]@N Channel|670@5V
Maximum Power Dissipation on PCB @ TC=25°C (W)
1
Typical Reverse Transfer Capacitance @ Vds (pF)
4.8@10V@N Channel|4.9@10V@P Channel
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
1.03@N Channel|0.7@P Channel
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
281
| Attribute | Value |
|---|---|
| PPAP | No |
| EU RoHS | Compliant |
| Category | Power MOSFET |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| PCB changed | 6 |
| Availability | No Stock Available |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 1.2 |
| Package Height | 0.6(Max) |
| Package Length | 1.6 |
| Supplier Package | SOT-563 |
| Maximum IDSS (uA) | 0.1 |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 10.54@N Channel|19.2@P Channel |
| Typical Rise Time (ns) | 7.28@N Channel|4.3@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1000 |
| Typical Gate Charge @ 10V (nC) | 0.85@P Channel |
| Typical Gate Charge @ Vgs (nC) | [email protected]@N Channel|0.85@10V|[email protected]@P Channel |
| Maximum Gate-Source Voltage (V) | ±12@N Channel|±8@P Channel |
| Typical Output Capacitance (pF) | 6.5@N Channel|7.2@P Channel |
| Typical Turn-On Delay Time (ns) | 4.06@N Channel|8.5@P Channel |
| Maximum Drain-Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.3@N Channel|1.4@P Channel |
| Typical Turn-Off Delay Time (ns) | 13.74@N Channel|20.2@P Channel |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.7 |
| Typical Gate to Drain Charge (nC) | 0.1@N Channel|0.09@P Channel |
| Maximum Gate Threshold Voltage (V) | 0.9@N Channel|1@P Channel |
| Minimum Gate Threshold Voltage (V) | 0.5 |
| Typical Gate to Source Charge (nC) | 0.07@N Channel|0.09@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.03@N Channel|0.7@P Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 37.1@10V@N Channel|46.1@10V@P Channel |
| Maximum Drain-Source Resistance (mOhm) | 480@5V@N Channel|970@5V@P Channel |
| Maximum Gate-Source Leakage Current (nA) | 4000@N Channel|5000@P Channel |
| Maximum Positive Gate-Source Voltage (V) | 12@N Channel|8@P Channel |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 3@N Channel|2@P Channel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | [email protected]|[email protected]|[email protected]|[email protected]|[email protected]@P Channel|300@5V|[email protected]|[email protected]|[email protected]|[email protected]|[email protected]@N Channel|670@5V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 4.8@10V@N Channel|4.9@10V@P Channel |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 1.03@N Channel|0.7@P Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 281 |
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